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TECHNICAL DATA
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/623
Devices Qualified Level
JAN, JANTX
2N7371
JANTXV
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Base Current IB 0.2 Adc
Collector Current IC 12 Adc
Total Power Dissipation @ TC = +250C (1) PT 100 W
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +175 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit TO-254AA*
0
Thermal Resistance, Junction-to-Case RJC 1.5 C/W
1) Derate linearly 0.667 W/0C above TC > +250C
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc VCEO(sus) 100 Vdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc ICEO 1.0 mAdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc, VBE = 1.5 Vdc ICEX 0.5 mAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc IEBO 2.0 mAdc
6 Lake Street, Lawrence, MA 01841 120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
2N7371 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 6.0 Adc, VCE = 3.0 Vdc hFE 1,000 18,000
IC = 12 Adc, VCE = 3.0 Vdc 150
Collector-Emitter Saturation Voltage
IC = 12 Adc, IB = 120 mAdc VCE(sat) 3.0 Vdc
Base-Emitter Saturation Voltage
IC = 12 Adc, IB = 120 mAdc VBE(sat) 4.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz hfe 10 250
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 12 Adc; IB1 = 120 mAdc t
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