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                                                                     DATA SHEET

                                                                             LDMOS FIELD EFFECT TRANSISTOR

                                                                                                         NE55410GR
                            N-CHANNEL SILICON POWER LDMOS FET
                  FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER



          DESCRIPTION
             The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such
          as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA's. This product has two different
          FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride
          surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.


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