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DATA SHEET
SILICON TRANSISTOR
2SC3582
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS
low-noise and small signal amplifiers from VHF band to UHF band. Low- in millimeters (inches)
5.2 MAX.
noise figure, high gain, and high current capability achieve a very wide (0.204 MAX.)
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
(0.216 MAX.)
proprietary new fabrication technique.
5.5 MAX.
FEATURES
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