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2n5320_2n5321


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                                                                                           2N5320
                                                                                           2N5321

                                               SMALL SIGNAL NPN TRANSISTORS
s   SILICON EPITAXIAL PLANAR NPN
    TRANSISTORS
s   MEDIUM POWER AMPLIFIER
s   PNP COMPLEMENTS ARE 2N5322 AND
    2N5323

DESCRIPTION
The 2N5320 and 2N5321 are silicon epitaxial
planar NPN transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commercial equipments.
                                                                          TO-39
The complementary PNP types are respectively
the 2N5322 and 2N5323




                                                            INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                            Parameter                          Value                Unit
                                                              2N5320                2N5321
     V CBO        Collector-Base Voltage (I E = 0)              100                   75       V
     V CEV        Collector-Emitter Voltage (V BE = 1.5V)       100                   75       V
     V CEO        Collector-Emitter Voltage (I B = 0)           75                    50       V
     V EBO        Emitter-Base Voltage (I C = 0)                 6                    5        V
        IC        Collector Current                                       1.2                  A
      I CM        Collector Peak Current                                   2                   A
        IB        Base Current                                             1                   A
                                                   o
      P tot       Total Dissipation at T amb = 25 C                        1                   W
      P tot       Total Dissipation at T c = 25 o C                       10                   W
                                                                                               o
    T stg , T j   Storage and Junction Temperature                     -65 to 200                  C


June 1997                                                                                              1/4
2N5320/2N5321

THERMAL DATA
                                                                                                               o
  R thj-case   Thermal Resistance Junction-Case                                   Max            17.5              C/W
                                                                                                               o
  R thj-amb    Thermal Resistance Junction-Ambient                                Max            175               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                           Test Conditions                Min.   Typ.   Max.   Unit
      I CBO    Collector Cut-off              V CB = 80 V      for 2N5320                               0.5        



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