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2n5322_2n5323


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                                                                                            2N5322
                                                                                            2N5323

                                               SMALL SIGNAL PNP TRANSISTORS
s   SILICON EPITAXIAL PLANAR PNP
    TRANSISTORS
s   MEDIUM POWER AMPLIFIER
s   NPN COMPLEMENTS ARE 2N5320 AND
    2N5321

DESCRIPTION
The 2N5322 and 2N5323 are silicon epitaxial
planar PNP transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commercial equipments.
                                                                           TO-39
The complementary NPN types are respectively
the 2N5320 and 2N5321




                                                             INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                            Parameter                           Value                Unit
                                                               2N5322                2N5323
     V CBO        Collector-Base Voltage (I E = 0)              -100                  -75       V
     V CEV        Collector-Emitter Voltage (V BE = -1.5V)      -100                  -75       V
     V CEO        Collector-Emitter Voltage (I B = 0)            -75                  -50       V
     V EBO        Emitter-Base Voltage (I C = 0)                 -6                    -5       V
        IC        Collector Current                                        -1.2                 A
      I CM        Collector Peak Current                                    -2                  A
        IB        Base Current                                              -1                  A
      P tot       Total Dissipation at T amb = 25 o C                       1                   W
      P tot       Total Dissipation at T c = 25 o C                        10                   W
                                                                                                o
    T stg , T j   Storage and Junction Temperature                      -65 to 200                  C


June 1997                                                                                               1/4
2N5322/2N5323

THERMAL DATA
                                                                                                           o
  R thj-case   Thermal Resistance Junction-Case                                Max           17.5              C/W
                                                                                                           o
  R thj-amb    Thermal Resistance Junction-Ambient                             Max           175               C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                        Test Conditions               Min.   Typ.   Max.   Unit
      I CBO    Collector Cut-off              V CB = -80 V    for 2N5322                            -0.5       



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