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2N5323
SMALL SIGNAL PNP TRANSISTORS
s SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
s MEDIUM POWER AMPLIFIER
s NPN COMPLEMENTS ARE 2N5320 AND
2N5321
DESCRIPTION
The 2N5322 and 2N5323 are silicon epitaxial
planar PNP transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commercial equipments.
TO-39
The complementary NPN types are respectively
the 2N5320 and 2N5321
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
2N5322 2N5323
V CBO Collector-Base Voltage (I E = 0) -100 -75 V
V CEV Collector-Emitter Voltage (V BE = -1.5V) -100 -75 V
V CEO Collector-Emitter Voltage (I B = 0) -75 -50 V
V EBO Emitter-Base Voltage (I C = 0) -6 -5 V
IC Collector Current -1.2 A
I CM Collector Peak Current -2 A
IB Base Current -1 A
P tot Total Dissipation at T amb = 25 o C 1 W
P tot Total Dissipation at T c = 25 o C 10 W
o
T stg , T j Storage and Junction Temperature -65 to 200 C
June 1997 1/4
2N5322/2N5323
THERMAL DATA
o
R thj-case Thermal Resistance Junction-Case Max 17.5 C/W
o
R thj-amb Thermal Resistance Junction-Ambient Max 175 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = -80 V for 2N5322 -0.5
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