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The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of collector cur-
rent, low leakage currents and low saturation volt-
2N2218/2N2219 approved to CECC 50002-
100, 2N2221/2N2222 approved to CECC
50002-101 available on request.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-base Voltage (I E = 0) 60 V
V CEO Collector-emitter Voltage (I B = 0) 30 V
V EBO Emitter-base Voltage (I C = 0) 5 V
IC Collector Current 0.8 A
Pt o t Total Power Dissipation at T amb 25
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