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                                                                              2N3055

                                                      SILICON NPN TRANSISTOR

n    SGS-THOMSON PREFERRED SALESTYPE

DESCRIPTION
The 2N3055 is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended
for power switching circuits, series and shunt
regulators, output stages and high fidelity
amplifiers.
                                                                  1
                                                                          2

                                                                       TO-3




                                                         INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symb ol                       Parameter                        Valu e         Unit
     V CBO    Collector-Base Voltage (IE = 0)                       100               V
     V CER    Collector-Emitter Voltage (RBE = 100)                   70              V
     V CEO    Collector-Emitter Voltage (I B = 0)                     60              V
     V EBO    Emitter-Base Voltage (I C = 0)                          7               V
       IC     Collector Current                                       15              A
       IB     Base Current                                            7               A
                                           o
      P tot   T otal Dissipation at T c  25 C                       115               W
                                                                                      o
     T s tg   Storage Temperature                                -65 to 200               C
                                                                                      o
       Tj     Max. O perating Junction Temperature                  200                   C


October 1995                                                                                  1/4
2N3055

THERMAL DATA
                                                                                                                            o
  R thj -ca se   Thermal Resistance Junction-case                                              Max           1.5                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbo l              Parameter                                 T est Con ditio ns                  Min .   T yp.   Max.   Unit
      I CEV      Collector Cut-off            V CE = 100 V                                                            1     mA
                 Current (V BE = -1.5V)       V CE = 100 V            T j = 150 o C                                   5     mA
      I CEO      Collector Cut-off            V CE = 30 V                                                            0.7    mA
                 Current (I B = 0)
      I EBO      Emitter Cut- off Current     V EB = 7 V                                                              5     mA
                 (I C = 0)
 V CEO(sus)  Collector-Emitter                I C = 200 mA                                            60                        V
             Sustaining Voltage
 V CER(sus ) Collector-Emitter                I C = 200 mA           R BE = 100                       70                        V
             Sustaining Voltage
  V CE(sat)      Collector-Emitter            IC = 4 A            IB = 400 mA                                         1         V
                 Saturation Voltage           I C = 10 A          IB = 3.3 A                                          3         V
      V BE       Base-Emitter Voltage         IC = 4 A            V CE = 4 V                                         1.5        V
      h FE       DC Current Gain              IC     =   0.5 A     VCE    =   4   V   Gr oup   4      20             50
                                              IC     =   0.5 A     VCE    =   4   V   Gr oup   5      35             75
                                              IC     =   0.5 A     VCE    =   4   V   Gr oup   6      60             145
                                              IC     =   0.5 A     VCE    =   4   V   Gr oup   7     120             250
                                              IC     =   4 A       V CE   =   4   V                   20             70
                                              IC     =   10 A      VCE    =   4   V                    5
h FE1 /hFE1  DC Current Gain                  I C = 0.5 A          VCE = 4 V                                         1.6
       fT        Transition frequency         IC = 1 A             V CE = 4 V                        2.5                    MHz
      I s /b     Second Breakdown             V CE = 40 V                                            2.87                       A
                 Collector Current
 Pulsed: Pulse duration = 300 

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