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Complementary power transistors
Low collector-emitter saturation voltage
Complementary NPN - PNP transistors
The devices are manufactured in epitaxial-base
planar technology and are suitable for audio,
power linear and switching applications.
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
January 2008 Rev 7 1/7
. www.st.com 7
Absolute maximun rating 2N3055 MJ2955
1 Absolute maximun rating
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-emitter voltage (IE = 0) 100 V
VCER Collector-emitter voltage (RBE = 100 ) 70 V
VCEO Collector-emitter voltage (IB = 0) 60 V
VEBO Collector-base voltage (IC = 0) 7 V
IC Collector current 15 A
IB Base current 7 A
PTOT Total dissipation at Tc 25
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