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                                                              High power NPN transistor

   High power dissipation
   Low collector-emitter saturation voltage

The device is a planar NPN transistor mounted in                         1
TO-3 metal case. It is intended for linear                                    2
amplifiers and inductive switching applications.

                                                       Figure 1.   Internal schematic diagram

Table 1.       Device summary
   Order code         Marking                      Package                          Packaging

    2N3773             2N3773                        TO-3                             Tray

October 2008                                       Rev 2                                              1/7
Electrical ratings                                                                         2N3773

1           Electrical ratings

            Table 2.       Absolute maximum ratings
             Symbol                                   Parameter                 Value      Unit

               VCEO      Collector-emitter voltage (IB = 0)                      140        V
               VCEV      Collector-emitter voltage (V BE = -1.5 V)               160        V
               VCBO      Collector-base voltage (IE = 0)                         160        V

               VEBO      Emitter-base voltage (IC = 0)                              7       V
                IC       Collector current                                       16         A
               ICM       Collector peak current (tP < 5 ms)                      30         A
                IB       Base current                                               4       A

                IBM      Base peak current (tP < 1 ms)                           15         A
               Ptot      Total dissipation at Tc  25 

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