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High power NPN transistor
High power dissipation
Low collector-emitter saturation voltage
The device is a planar NPN transistor mounted in 1
TO-3 metal case. It is intended for linear 2
amplifiers and inductive switching applications.
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
2N3773 2N3773 TO-3 Tray
October 2008 Rev 2 1/7
Electrical ratings 2N3773
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCEO Collector-emitter voltage (IB = 0) 140 V
VCEV Collector-emitter voltage (V BE = -1.5 V) 160 V
VCBO Collector-base voltage (IE = 0) 160 V
VEBO Emitter-base voltage (IC = 0) 7 V
IC Collector current 16 A
ICM Collector peak current (tP < 5 ms) 30 A
IB Base current 4 A
IBM Base peak current (tP < 1 ms) 15 A
Ptot Total dissipation at Tc 25
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