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Low voltage NPN power transistor
High current gain characteristic
Fast switching speed
Fully insulated package
DC-DC converter TO-220FP
The device is manufactured using new "PB-HCD" Figure 1. Internal schematic diagrams
(power bipolar high current density) technology.
The resulting transistor shows exceptional high
gain performances coupled with very low
Table 1. Device summary
Order code Marking Package Packaging
2ST1480FP 2ST1480FP TO-220FP Tube
December 2009 Doc ID 16856 Rev 1 1/7
Absolute maximum ratings 2ST1480FP
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 80 V
VCEO Collector-emitter voltage (IB = 0) 80 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 5 A
ICM Collector peak current 10 A
IB Base current 1 A
PTOT Total dissipation at Tc 25
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