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                                                    Low voltage NPN power transistor

   High current gain characteristic
   Fast switching speed
   Fully insulated package

Applications                                                                                3
   DC-DC converter                                                       TO-220FP

The device is manufactured using new "PB-HCD"          Figure 1.   Internal schematic diagrams
(power bipolar high current density) technology.
The resulting transistor shows exceptional high
gain performances coupled with very low
saturation voltage.

Table 1.     Device summary
       Order code                     Marking                Package                    Packaging

       2ST1480FP                  2ST1480FP                  TO-220FP                       Tube

December 2009                               Doc ID 16856 Rev 1                                           1/7
Absolute maximum ratings                                                       2ST1480FP

1         Absolute maximum ratings

          Table 2.    Absolute maximum ratings
            Symbol                         Parameter                Value          Unit

             VCBO    Collector-base voltage (IE = 0)                 80             V
             VCEO    Collector-emitter voltage (IB = 0)              80             V
             VEBO    Emitter-base voltage (IC = 0)                    5             V
              IC     Collector current                                5             A
             ICM     Collector peak current                          10             A
              IB     Base current                                     1             A
             PTOT    Total dissipation at Tc  25 

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