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                            High power PNP epitaxial planar bipolar transistor

   High breakdown voltage VCEO = -250 V
   Complementary to 2ST5949
   Typical ft = 25 MHz
   Fully characterized at 125 oC

Applications                                                            1
   Audio power amplifier                                                     2
The device is a PNP transistor manufactured           Figure 1.   Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.

Table 1.     Device summary

       Order code                   Marking                 Package                Packaging

           2ST2121                  2ST2121                  TO-3                     tray

November 2008                                     Rev 5                                            1/8
Absolute maximun rating                                                              2ST2121

1         Absolute maximun rating

          Table 2.       Absolute maximum rating
            Symbol                             Parameter                  Value        Unit
             VCBO       Collector-base voltage (IE = 0)                   -250          V
             VCEO       Collector-emitter voltage (IB = 0)                -250          V
             VEBO       Emitter-base voltage (IC = 0)                       -6          V
               IC       Collector current                                  -17          A
              ICM       Collector peak current (tP < 5 ms)                 -34          A
             PTOT       Total dissipation at Tc = 25 

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