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                                                      Low voltage NPN power transistor

   High switching speed
   Good performances in terms of hFE linearity

   Linear and switching industrial applications
Description                                                                            1

The device is manufactured in planar technology
with "base island" layout. The resulting transistor
shows high gain performance coupled with low
saturation voltage.
                                                         Figure 1.     Internal schematic diagram

Table 1.     Device summary
        Order code                   Marking                   Package                     Packaging

           2ST31A                    2ST31A                        TO-220                      Tube

December 2010                                 Doc ID 17868 Rev 2                                            1/8
Absolute maximum ratings                                                      2ST31A

1         Absolute maximum ratings

          Table 2.     Absolute maximum ratings
           Symbol                             Parameter            Value        Unit

            VCBO     Collector-base voltage (IE = 0)                60           V
            VCEO     Collector-emitter voltage (IB = 0)             60           V
            VEBO     Emitter-base voltage (IC = 0)                   5           V
             IC      Collector current                               3           A
             ICM     Collector peak current                          5           A
             IB      Base current                                    1           A
            PTOT     Total dissipation at Tcase = 25

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