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                                                                                   2ST5949

                           High power NPN epitaxial planar bipolar transistor

Features
   High breakdown voltage VCEO = 250 V
   Complementary to 2ST2121
   Typical ft = 25 MHz
   Fully characterized at 125 oC

Application
                                                                       1
   Audio power amplifier
                                                                            2
                                                                           TO-3
Description
The device is a NPN transistor manufactured           Figure 1.   Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.




Table 1.      Device summary
       Order code                   Marking                 Package                Packaging

           2ST5949                  2ST5949                  TO-3                     tray




November 2008                                     Rev 4                                            1/8
                                                                                             www.st.com   8
Absolute maximum ratings                                                             2ST5949


1         Absolute maximum ratings

          Table 2.        Absolute maximum rating
           Symbol                                Parameter                Value        Unit
             VCBO        Collector-base voltage (IE = 0)                   250          V
             VCEO        Collector-emitter voltage (IB = 0)                250          V
             VEBO        Emitter-base voltage (IC = 0)                      6           V
               IC        Collector current                                 17           A
              ICM        Collector peak current (tP < 5 ms)                34           A
             PTOT        Total dissipation at Tc = 25

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