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2STA1695
High power PNP epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = -140 V
Complementary to 2STC4468
Typical ft = 20 MHz
Fully characterized at 125 oC
3
2
Applications 1
Audio power amplifier
TO-3P
Description
The device is a PNP transistor manufactured Figure 1. Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
Table 1. Device summary
Order code Marking Package Packaging
2STA1695 2STA1695 TO-3P Tube
November 2008 Rev 2 1/9
www.st.com 9
Electrical ratings 2STA1695
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -140 V
VCEO Collector-emitter voltage (IB = 0) -140 V
VEBO Emitter-base voltage (IC = 0) -6 V
IC Collector current -10 A
ICM Collector peak current (tP < 5 ms) -20 A
Ptot Total dissipation at Tc = 25 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo