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                           High power PNP epitaxial planar bipolar transistor

   High breakdown voltage VCEO = -140 V
   Complementary to 2STC4468
   Typical ft = 20 MHz
   Fully characterized at 125 oC
Applications                                                                     1

   Audio power amplifier
The device is a PNP transistor manufactured           Figure 1.   Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.

Table 1.     Device summary
       Order code                  Marking                  Package                  Packaging

        2STA1695                   2STA1695                  TO-3P                       Tube

November 2008                                     Rev 2                                               1/9
Electrical ratings                                                                    2STA1695

1           Electrical ratings

            Table 2.        Absolute maximum rating
                Symbol                          Parameter                  Value      Unit
                     VCBO       Collector-base voltage (IE = 0)            -140        V
                     VCEO       Collector-emitter voltage (IB = 0)         -140        V
                     VEBO       Emitter-base voltage (IC = 0)                -6        V
                      IC        Collector current                           -10        A
                     ICM        Collector peak current (tP < 5 ms)          -20        A
                     Ptot       Total dissipation at Tc = 25 

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