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                            High power PNP epitaxial planar bipolar transistor

   High breakdown voltage VCEO = -100 V
   Complementary to 2STC2510
   Typical ft = 20 MHz

   Fully characterized at 125 oC
Application                                                                       1

   Audio power amplifier                                                  TO-3P

                                                      Figure 1.   Internal schematic diagram
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.

Table 1.    Device summary
       Order code                   Marking                 Package                   Packaging

        2STA2510                   2STA2510                  TO-3P                        Tube

November 2008                                     Rev 3                                                1/8
Electrical ratings                                                                2STA2510

1        Electrical ratings

         Table 2.      Absolute maximum rating
            Symbol                            Parameter                Value         Unit
             VCBO      Collector-base voltage (IE = 0)                 -100           V
             VCEO      Collector-emitter voltage (IB = 0)              -100           V
             VEBO      Emitter-base voltage (IC = 0)                     -6           V
              IC       Collector current                                -25           A
              ICM      Collector peak current (tP < 5 ms)               -50           A
             PTOT      Total dissipation at Tc = 25 

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