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High power PNP epitaxial planar bipolar transistor
High breakdown voltage VCEO = -250 V
Complementary to 2STC5948
Typical ft = 25 MHz
Fully characterized at 125 oC
Audio power amplifier 1
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear Figure 1. Internal schematic diagram
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1. Device summary
Order code Marking Package Packaging
2STA2120 2STA2120 TO-3P Tube
November 2008 Rev 3 1/8
Electrical ratings 2STA2120
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -250 V
VCEO Collector-emitter voltage (IB = 0) -250 V
VEBO Emitter-base voltage (IC = 0) -6 V
IC Collector current -17 A
ICM Collector peak current (tP < 5 ms) -34 A
PTOT Total dissipation at Tc = 25
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