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                            High power PNP epitaxial planar bipolar transistor

I   High breakdown voltage VCEO = -250 V
I   Complementary to 2STC5949
I   Typical ft = 25 MHz
I   Fully characterized at 125 oC

I   Audio power amplifier
The device is a PNP transistor manufactured           Figure 1.   Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.

Table 1.     Device summary
        Order code                  Marking                 Package                Packaging

        2STA2121                    2STA2121                TO-264                   Tube

November 2008                                     Rev 3                                           1/8
Electrical ratings                                                                   2STA2121

1           Electrical ratings

            Table 2.       Absolute maximum rating
               Symbol                            Parameter                Value         Unit
                VCBO        Collector-base voltage (IE = 0)               -250           V
                VCEO        Collector-emitter voltage (IB = 0)            -250           V
                VEBO        Emitter-base voltage (IC = 0)                   -6           V
                     IC     Collector current                              -17           A
                 ICM        Collector peak current (tP < 5ms)              -34           A
                 PTOT       Total dissipation at Tc = 25 

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