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High power PNP epitaxial planar bipolar transistor
I High breakdown voltage VCEO = -250 V
I Complementary to 2STC5949
I Typical ft = 25 MHz
I Fully characterized at 125 oC
I Audio power amplifier
The device is a PNP transistor manufactured Figure 1. Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1. Device summary
Order code Marking Package Packaging
2STA2121 2STA2121 TO-264 Tube
November 2008 Rev 3 1/8
Electrical ratings 2STA2121
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -250 V
VCEO Collector-emitter voltage (IB = 0) -250 V
VEBO Emitter-base voltage (IC = 0) -6 V
IC Collector current -17 A
ICM Collector peak current (tP < 5ms) -34 A
PTOT Total dissipation at Tc = 25
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