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                           High power NPN epitaxial planar bipolar transistor

   High breakdown voltage VCEO = 100 V
   Complementary to 2STA2510
   Typical ft = 20 MHz

   Fully characterized at 125 oC
Application                                                                       1

   Audio power amplifier                                                  TO-3P

                                                      Figure 1.   Internal schematic diagram
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.

Table 1.    Device summary
       Order code                   Marking                 Package                   Packaging

        2STC2510                   2STC2510                  TO-3P                        Tube

November 2008                                     Rev 3                                                1/8
Electrical ratings                                                                   2STC2510

1        Electrical ratings

         Table 2.      Absolute maximum rating
           Symbol                             Parameter                   Value          Unit

            VCBO       Collector-base voltage (IE = 0)                     100            V

            VCEO       Collector-emitter voltage (IB = 0)                  100            V

            VEBO       Emitter-base voltage (IC = 0)                        6             V
              IC       Collector current                                   25             A

             ICM       Collector peak current (tP < 5ms)                   50             A

             PTOT      Total dissipation at Tc = 25 

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