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                           High power NPN epitaxial planar bipolar transistor

   High breakdown voltage VCEO = 120 V
   Complementary to 2STA1694
   Fast-switching speed
   Typical ft = 20 MHz

   Fully characterized at 125 oC                                                          3
   Audio power amplifier

Description                                           Figure 1.   Internal schematic diagram
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.

Table 1.    Device summary
       Order code                   Marking                 Package                   Packaging

        2STC4467                   2STC4467                  TO-3P                        Tube

February 2009                                     Rev 3                                                1/8
Electrical ratings                                                                      2STC4467

1             Electrical ratings

Table 2.       Absolute maximum ratings
  Symbol                                    Parameter                        Value          Unit
      VCBO     Collector-base voltage (IE = 0)                                120            V
      VCEO     Collector-emitter voltage (IB = 0)                             120            V
      VEBO     Emitter-base voltage (IC = 0)                                   6             V
       IC      Collector current                                               8             A
      ICM      Collector peak current (tP < 5 ms)                             16             A
      PTOT     Total dissipation at Tc = 25 

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