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2STC4467
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 120 V
Complementary to 2STA1694
Fast-switching speed
Typical ft = 20 MHz
Fully characterized at 125 oC 3
2
1
Applications
TO-3P
Audio power amplifier
Description Figure 1. Internal schematic diagram
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1. Device summary
Order code Marking Package Packaging
2STC4467 2STC4467 TO-3P Tube
February 2009 Rev 3 1/8
www.st.com 8
Electrical ratings 2STC4467
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 120 V
VCEO Collector-emitter voltage (IB = 0) 120 V
VEBO Emitter-base voltage (IC = 0) 6 V
IC Collector current 8 A
ICM Collector peak current (tP < 5 ms) 16 A
PTOT Total dissipation at Tc = 25 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo