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                           High power NPN epitaxial planar bipolar transistor

   High breakdown voltage VCEO = 140 V
   Complementary to 2STA1695
   Typical ft = 20 MHz
   Fully characterized at 125 oC

Application                                                                               2
   Audio power amplifier                                                      TO-3P

The device is a NPN transistor manufactured               Figure 1.   Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.

Table 1.     Device summary
       Order code                  Marking                      Package                   Packaging

       2STC4468                    2STC4468                      TO-3P                        Tube

November 2008                                     Rev 2                                                    1/9
Electrical ratings                                                                   2STC4468

1           Electrical ratings

            Table 2.         Absolute maximum rating
              Symbol                                Parameter             Value         Unit

                VCBO        Collector-base voltage (IE = 0)                200           V
                VCEO        Collector-emitter voltage (IB = 0)             140           V
                VEBO        Emitter-base voltage (IC = 0)                   6            V
                  IC        Collector current                              10            A
                 ICM        Collector peak current (tP < 5 ms)             20            A
                 Ptot       Total dissipation at Tc = 25 

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