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High power NPN epitaxial planar bipolar transistor
High breakdown voltage VCEO = 140 V
Complementary to 2STA1695
Typical ft = 20 MHz
Fully characterized at 125 oC
Audio power amplifier TO-3P
The device is a NPN transistor manufactured Figure 1. Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
Table 1. Device summary
Order code Marking Package Packaging
2STC4468 2STC4468 TO-3P Tube
November 2008 Rev 2 1/9
Electrical ratings 2STC4468
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 200 V
VCEO Collector-emitter voltage (IB = 0) 140 V
VEBO Emitter-base voltage (IC = 0) 6 V
IC Collector current 10 A
ICM Collector peak current (tP < 5 ms) 20 A
Ptot Total dissipation at Tc = 25
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