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NPN power bipolar transistor
High breakdown voltage VCEO = 230 V
Complementary to 2STA1837
High transition frequency, typical fT = 100 MHz
Audio power amplifier
Drive stage amplifier 2
This device is a NPN transistor manufactured
using new "PB-HDC" (power bipolar high density
current) technology. The resulting transistor Figure 1. Internal schematic diagram
shows good gain linearity behavior.
Table 1. Device summary
Order code Marking Package Packaging
2STC4793 2STC4793 TO-220FP Tube
March 2010 Doc ID 15401 Rev 2 1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 7
change without notice.
Electrical ratings 2STC4793
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 230 V
VCEO Collector-emitter voltage (IB = 0) 230 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 1 A
ICM Collector peak current 2 A
PTOT Total dissipation at TC = 25
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