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                           High power NPN epitaxial planar bipolar transistor

     High breakdown voltage VCEO = 250 V
     Complementary to 2STA2120
     Typical ft = 25 MHz
     Fully characterized at 125 oC

  Application                                                                                    3
     Audio power amplifier                                                               1

  The device is a NPN transistor manufactured               Figure 1.    Internal schematic diagram
  using new BiT-LA (Bipolar transistor for linear
  amplifier) technology. The resulting transistor
  shows good gain linearity behaviour.

  Table 1.      Device summary

      Order code                   Marking                      Package                  Packaging

       2STC5948                   2STC5948                       TO-3P                       Tube

November 2008                                       Rev 4                                                  1/8
Electrical ratings                                                                     2STC5948

1           Electrical ratings

            Table 2.      Absolute maximum rating
              Symbol                           Parameter                    Value         Unit
                VCBO      Collector-base voltage (IE = 0)                    250           V
                VCEO      Collector-emitter voltage (IB = 0)                 250           V
                VEBO      Emitter-base voltage (IC = 0)                       6            V
                 IC       Collector current                                  17            A
                ICM       Collector peak current (tP < 5 ms)                 34            A
                PTOT      Total dissipation at Tc = 25 

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