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                           High power NPN epitaxial planar bipolar transistor

   High breakdown voltage VCEO = 250 V
   Complementary to 2STA2121
   Typical ft = 25 MHz
   Fully characterized at 125 oC

   Audio power amplifier

The device is a NPN transistor manufactured           Figure 1.   Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.

Table 1.     Device summary
       Order code                   Marking                 Package                Packaging

        2STC5949                   2STC5949                 TO-264                   Tube

November 2008                                     Rev 4                                           1/8
Absolute maximum ratings                                                             2STC5949

1         Absolute maximum ratings

          Table 2.        Absolute maximum rating
           Symbol                                Parameter                Value         Unit
             VCBO        Collector-base voltage (IE = 0)                   250           V
             VCEO        Collector-emitter voltage (IB = 0)                250           V
             VEBO        Emitter-base voltage (IC = 0)                      6            V
               IC        Collector current                                 17            A
              ICM        Collector peak current (tP < 5 ms)                34            A
             PTOT        Total dissipation at Tc = 25

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