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                           High power NPN epitaxial planar bipolar transistor

   High breakdown voltage VCEO > 230V
   Complementary to 2STA1943
   Fast-switching speed
   Typical fT = 30 MHz

Application                                                                            3
   Audio power amplifier

This device is a NPN transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.                  Figure 1.   Internal schematic diagram

Table 1.      Device summary
           Order code                 Marking                Package                   Packaging
           2STC5200                  2STC5200                 TO-264                       Tube

December 2007                                     Rev 2                                                 1/9
Electrical ratings                                                              2STC5200

1           Electrical ratings

            Table 2.       Absolute maximum ratings
               Symbol                     Parameter                  Value       Unit

                VCBO       Collector-base voltage (IE = 0)            230         V
                VCEO       Collector-emitter voltage (IB = 0)         230         V
                VEBO       Emitter-base voltage (IC = 0)               5          V
                  IC       Collector current                          15          A
                 ICM       Collector peak current                     30          A
                 Ptot      Total dissipation at TC = 25

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