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                           High power NPN epitaxial planar bipolar transistor

   High breakdown voltage VCEO = 230 V
   Complementary to 2STA1962
   Fast-switching speed
   Typical fT = 30 MHz

Application                                                                                 3
   Audio power amplifier                                                            1

This device is a NPN transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.                  Figure 1.     Internal schematic diagram

Table 1.       Device summary
            Order code                Marking                Package                    Packaging
            2STC5242                 2STC5242                     TO-3P                     Tube

July 2008                                         Rev 3                                                  1/9
Electrical ratings                                                                 2STC5242

1           Electrical ratings

            Table 2.       Absolute maximum ratings
               Symbol                     Parameter                     Value       Unit

                VCBO       Collector-base voltage (IE = 0)               230         V
                VCEO       Collector-emitter voltage (IB = 0)            230         V
                VEBO       Emitter-base voltage (IC = 0)                  5          V
                  IC       Collector current                             15          A
                 ICM       Collector peak current                        30          A
                 Ptot      Total dissipation at TC = 25

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