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                                 Low voltage fast-switching NPN power transistor

   Very low collector-emitter saturation voltage
   High current gain characteristic
   Fast switching speed                                                                   3
Applications                                                                      1

   Motherboard & hard disk drive
   Mobile equipment
   DC-DC converter

                                                      Figure 1.   Internal schematic diagram
The 2STF1340 is a NPN transistor manufactured
using new "PB-HCD" (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary PNP is the 2STF2340.

Table 1.       Device summary
   Order code          Marking                     Package                     Packaging

   2STF1340               1340                     SOT-89                     Tape and reel

October 2009                               Doc ID 12796 Rev 2                                      1/10
Electrical ratings                                                                        2STF1340

1           Electrical ratings

            Table 2.       Absolute maximum ratings
             Symbol                              Parameter                     Value         Unit

               VCES      Collector-emitter voltage (VBE = 0)                    40            V
               VCEO      Collector-emitter voltage (IB = 0)                     40            V
               VEBO      Emitter-base voltage (IC = 0)                           5            V
                IC       Collector current                                       3            A
               ICM       Collector peak current (tP < 5 ms)                      6            A
               Ptot      Total dissipation at Tamb = 25 

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