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Low voltage fast-switching NPN power transistor
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed 3
Motherboard & hard disk drive
Figure 1. Internal schematic diagram
The 2STF1340 is a NPN transistor manufactured
using new "PB-HCD" (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary PNP is the 2STF2340.
Table 1. Device summary
Order code Marking Package Packaging
2STF1340 1340 SOT-89 Tape and reel
October 2009 Doc ID 12796 Rev 2 1/10
Electrical ratings 2STF1340
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 40 V
VCEO Collector-emitter voltage (IB = 0) 40 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 3 A
ICM Collector peak current (tP < 5 ms) 6 A
Ptot Total dissipation at Tamb = 25
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