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2stl1360_2stx1360


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                                                                                   2STL1360
                                                                                   2STX1360

                             Low voltage fast-switching NPN power transistors

Features
    Very low collector-emitter saturation voltage
    High current gain characteristic
    Fast-switching speed

Applications
    Emergency lighting
    LED
                                                                    TO-92            TO-92L
    Voltage regulation
    Relay drive

                                                        Figure 1.    Internal schematic diagram
Description
The devices are NPN transistors manufactured
using new "PB-HCD" (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.




Table 1.       Device summary
   Order codes           Marking                    Packages                      Packaging

    2STL1360             L1360                       TO-92L                          Bag
    2STX1360             X1360                       TO-92                           Bag


October 2009                                Doc ID 11763 Rev 3                                     1/10
                                                                                              www.st.com   10
Electrical ratings                                                                 2STL1360, 2STX1360


1           Electrical ratings

            Table 2.     Absolute maximum ratings
                                                                                    Value
             Symbol                           Parameter                                             Unit
                                                                           2STX1360 2STL1360

               VCBO    Collector-base voltage (IE = 0)                               80              V
               VCEO    Collector-emitter voltage (IB = 0)                            60              V
               VEBO    Emitter-base voltage (IC = 0)                                  6              V
                IC     Collector current                                              3              A
               ICM     Collector peak current (tP < 5 ms)                             5              A
                IB     Base current                                                  0.2             A
                IBM    Base peak current (tP < 5 ms)                                 0.4             A
               PTOT    Total dissipation at Tamb = 25 



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