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                   Low voltage fast-switching PNP power bipolar transistor

   The device is qualified for automotive
   Very low collector-emitter saturation voltage
   High current gain characteristic
   Fast switching speed                                                                 3
   Surface mounting device in medium power
   SOT-223 package
   Emergency lighting
                                                       Figure 1.   Internal schematic diagram
   CCFL drivers (back lighting)
   Voltage regulation
   Relay driver

The device in a PNP transistor manufactured
using new "PB-HCD" (Power Bipolar High Current
Density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.

Table 1.       Device summary
   Order code           Marking                    Package                      Packaging

   2STN2540-A           N2540                      SOT-223                      Tape & reel

January 2008                                       Rev 2                                            1/9
Electrical ratings                                                             2STN2540-A

1           Electrical ratings

            Table 2.      Absolute maximum rating
             Symbol                            Parameter               Value        Unit

               VCBO    Collector-base voltage (IE = 0)                  -40          V
               VCEO    Collector-emitter voltage (IB = 0)               -40          V
               VEBO    Emitter-base voltage (IC = 0)                    -6           V

                IC     Collector current                                -5           A
               ICM     Collector peak current (tP < 5ms)                -10          A
                IBM    Base peak current (tP < 5ms)                     -2           A
               Ptot    Total dissipation at Tamb = 25

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