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                   Low voltage fast-switching PNP power bipolar transistor

   Very low collector-emitter saturation voltage
   High current gain characteristic
   Fast switching speed
   Surface mounting device in medium power
   SOT-223 package                                                                      3
   Emergency lighting                                                     SOT-223

   CCFL drivers (back lighting)
   Voltage regulation
                                                       Figure 1.   Internal schematic diagram
   Relay driver

The device is a PNP transistor manufactured
using new "PB-HCD" (Power Bipolar High Current
Density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.

Table 1.       Device summary
   Order code           Marking                    Package                      Packaging

   2STN2540             N2540                      SOT-223                     Tape and reel

January 2008                                       Rev 3                                             1/9
Electrical ratings                                                                2STN2540

1           Electrical ratings

            Table 2.      Absolute maximum rating
             Symbol                            Parameter               Value         Unit

               VCBO    Collector-base voltage (IE = 0)                  -40           V
               VCEO    Collector-emitter voltage (IB = 0)               -40           V
               VEBO    Emitter-base voltage (IC = 0)                    -6            V

                IC     Collector current                                -5            A
               ICM     Collector peak current (tP < 5ms)                -10           A
                IBM    Base peak current (tP < 5ms)                     -2            A
               Ptot    Total dissipation at Tamb = 25 

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