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Low voltage fast-switching NPN power transistor
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for surface
Voltage and relay driver
Figure 1. Internal schematic diagram
The 2STR1215 is a NPN transistor manufactured
using new "PB-HCD" (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary PNP is the 2STR2215.
Table 1. Device summary
Order code Marking Package Packaging
2STR1215 115 SOT-23 Tape and reel
January 2009 Rev 4 1/9
Electrical ratings 2STR1215
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 15 V
VCEO Collector-emitter voltage (IB = 0) 15 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 1.5 A
ICM Collector peak current (tP < 5 ms) 3 A
Ptot Total dissipation at Tamb = 25
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