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                                Low voltage fast-switching PNP power transistor

   Very low collector-emitter saturation voltage
   High current gain characteristic
   Fast switching speed                                                3
   Miniature SOT-23 plastic package for surface
   mounting circuits                                                                 2
   Battery charger
   Motor and relay driver
   Voltage regulation
                                                       Figure 1.   Internal schematic diagram

The 2STR2215 is a PNP transistor manufactured
using new "PB-HCD" (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary NPN is the 2STR1215.

Table 1.       Device summary
   Order code           Marking                    Package                          Packaging

   2STR2215               215                       SOT-23                      Tape and reel

January 2009                                       Rev 4                                              1/9
Electrical ratings                                                                   2STR2215

1           Electrical ratings

            Table 2.        Absolute maximum ratings
             Symbol                               Parameter               Value         Unit

                 VCBO     Collector-base voltage (IE = 0)                  -15           V
                 VCEO     Collector-emitter voltage (IB = 0)               -15           V
                 VEBO     Emitter-base voltage (IC = 0)                     -5           V
                  IC      Collector current                                -1.5          A
                  ICM     Collector peak current (tP < 5 ms)                -3           A
                  Ptot    Total dissipation at Tamb = 25 

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