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Low voltage fast-switching PNP power transistor
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed 3
Miniature SOT-23 plastic package for surface
mounting circuits 2
Motor and relay driver
Figure 1. Internal schematic diagram
The 2STR2215 is a PNP transistor manufactured
using new "PB-HCD" (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary NPN is the 2STR1215.
Table 1. Device summary
Order code Marking Package Packaging
2STR2215 215 SOT-23 Tape and reel
January 2009 Rev 4 1/9
Electrical ratings 2STR2215
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -15 V
VCEO Collector-emitter voltage (IB = 0) -15 V
VEBO Emitter-base voltage (IC = 0) -5 V
IC Collector current -1.5 A
ICM Collector peak current (tP < 5 ms) -3 A
Ptot Total dissipation at Tamb = 25
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