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High power PNP epitaxial planar bipolar transistor
High breakdown voltage VCEO = -80 V
Complementary to 2STW4466
Typical ft = 20 MHz
Fully characterized at 125 oC
Audio power amplifier 1
The device is a PNP transistor manufactured in
low voltage planar technology using base island Figure 1. Internal schematic diagram
layout. The resulting transistor shows good gain
linearity coupled with low VCE(sat) behaviour.
Recommended for 40W to 70W high fidelity audio
frequency amplifier output stage.
Table 1. Device summary
Order code Marking Package Packaging
2STW1693 2STW1693 TO-247 Tube
October 2008 Rev 2 1/9
Electrical ratings 2STW1693
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -100 V
VCEO Collector-emitter voltage (IB = 0) -80 V
VEBO Emitter-base voltage (IC = 0) -6 V
IC Collector current -6 A
ICM Collector peak current (tP < 5 ms) -12 A
PTOT Total dissipation at Tc = 25
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