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                           High power PNP epitaxial planar bipolar transistor

   High breakdown voltage VCEO = -80 V
   Complementary to 2STW4466
   Typical ft = 20 MHz

   Fully characterized at 125 oC

Applications                                                                               3
   Audio power amplifier                                                           1
The device is a PNP transistor manufactured in
low voltage planar technology using base island        Figure 1.   Internal schematic diagram
layout. The resulting transistor shows good gain
linearity coupled with low VCE(sat) behaviour.
Recommended for 40W to 70W high fidelity audio
frequency amplifier output stage.

Table 1.   Device summary

       Order code                  Marking                   Package                   Packaging

       2STW1693                    2STW1693                  TO-247                        Tube

October 2008                                       Rev 2                                                1/9
Electrical ratings                                                                         2STW1693

1          Electrical ratings

           Table 2.       Absolute maximum rating
              Symbol                               Parameter                    Value          Unit
                VCBO      Collector-base voltage (IE = 0)                       -100            V
                VCEO      Collector-emitter voltage (IB = 0)                     -80            V
                VEBO      Emitter-base voltage (IC = 0)                          -6             V
                     IC   Collector current                                      -6             A
                 ICM      Collector peak current (tP < 5 ms)                     -12            A
                PTOT      Total dissipation at Tc = 25 

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