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                           High power PNP epitaxial planar bipolar transistor

   High breakdown voltage VCEO = -140 V
   Complementary to 2STW4468
   Typical ft = 20 MHz
   Fully characterized at 125 oC

   Audio power amplifier                                                          1

The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear       Figure 1.   Internal schematic diagram
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.

Table 1.       Device summary
       Order code                  Marking                  Package                   Packaging

       2STW1695                    2STW1695                 TO-247                            Tube

October 2008                                      Rev 4                                                    1/9
Electrical ratings                                                                    2STW1695

1           Electrical ratings

            Table 2.        Absolute maximum rating
                Symbol                          Parameter                  Value      Unit
                     VCBO       Collector-base voltage (IE = 0)            -140        V
                     VCEO       Collector-emitter voltage (IB = 0)         -140        V
                     VEBO       Emitter-base voltage (IC = 0)                -6        V
                      IC        Collector current                           -10        A
                     ICM        Collector peak current (tP < 5 ms)          -20        A
                     Ptot       Total dissipation at Tc = 25 

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