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High power PNP epitaxial planar bipolar transistor
High breakdown voltage VCEO = -140 V
Complementary to 2STW4468
Typical ft = 20 MHz
Fully characterized at 125 oC
Audio power amplifier 1
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear Figure 1. Internal schematic diagram
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
Table 1. Device summary
Order code Marking Package Packaging
2STW1695 2STW1695 TO-247 Tube
October 2008 Rev 4 1/9
Electrical ratings 2STW1695
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -140 V
VCEO Collector-emitter voltage (IB = 0) -140 V
VEBO Emitter-base voltage (IC = 0) -6 V
IC Collector current -10 A
ICM Collector peak current (tP < 5 ms) -20 A
Ptot Total dissipation at Tc = 25
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