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                           High power NPN epitaxial planar bipolar transistor

   High breakdown voltage VCEO = 80 V
   Complementary to 2STW1693
   Typical ft = 20 MHz

   Fully characterized at 125 oC

Applications                                                                               3
   Audio power amplifier                                                           1
The device is a NPN transistor manufactured in
low voltage planar technology using base island        Figure 1.   Internal schematic diagram
layout. The resulting transistor shows good gain
linearity coupled with low VCE(sat) behaviour.
Recommended for 40 W to 70 W high fidelity
audio frequency amplifier output stage.

Table 1.    Device summary
      Order code                   Marking                   Package                   Packaging

       2STW4466                    2STW4466                  TO-247                        Tube

September 2008                                     Rev 2                                                1/9
Electrical ratings                                                                 2STW4466

1          Electrical ratings

           Table 2.        Absolute maximum rating
               Symbol                            Parameter              Value          Unit
                VCBO       Collector-base voltage (IE = 0)               100            V
                VCEO       Collector-emitter voltage (IB = 0)            80             V
                VEBO       Emitter-base voltage (IC = 0)                  6             V
                     IC    Collector current                              6             A
                 ICM       Collector peak current (tP < 5 ms)            12             A
                 PTOT      Total dissipation at Tc = 25 

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