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                           High power NPN epitaxial planar bipolar transistor

   High breakdown voltage VCEO = 140 V
   Complementary to 2STW1695
   Fast-switching speed
   Typical ft = 20 MHz

   Fully characterized at 125 oC
Applications                                                                          1

   Audio power amplifier                                                     TO-247

                                                          Figure 1.   Internal schematic diagram
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.

Table 1.       Device summary
       Order code                  Marking                      Package                   Packaging

       2STW4468                    2STW4468                     TO-247                            Tube

October 2008                                      Rev 4                                                        1/9
Electrical ratings                                                                2STW4468

1          Electrical ratings

           Table 2.       Absolute maximum rating
              Symbol                               Parameter           Value          Unit

               VCBO       Collector-base voltage (IE = 0)               200            V
               VCEO       Collector-emitter voltage (IB = 0)            140            V

               VEBO       Emitter-base voltage (IC = 0)                  6             V

                 IC       Collector current                             10             A
                ICM       Collector peak current (tP < 5 ms)            20             A
                Ptot      Total dissipation at Tc = 25 

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