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                                      High power NPN epitaxial planar bipolar transistor
                                                                                                                                   Preliminary data

    High breakdown voltage VCEO = 230 V
    Typical fT = 30 MHz

    Audio power amplifier
Description                                                                                                            1

This device is a NPN transistor manufactured
using new BiT-LA (bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
                                                                             Figure 1.         Internal schematic diagram

Table 1.          Device summary
            Order code                               Marking                             Package                               Packaging

              2SC5200                                2SC5200                              TO-264                                   Tube

September 2009                                               Doc ID 16310 Rev 1                                                                 1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to               8
change without notice.
Electrical ratings                                                            2SC5200

1           Electrical ratings

            Table 2.    Absolute maximum ratings
               Symbol                  Parameter                   Value      Unit

                VCBO    Collector-base voltage (IE = 0)             230        V
                VCEO    Collector-emitter voltage (IB = 0)          230        V
                VEBO    Emitter-base voltage (IC = 0)                5         V
                 IC     Collector current                           15         A
                 ICM    Collector peak current                      30         A
                PTOT    Total dissipation at TC = 25 

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