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RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
. METAL/CERAMIC HERMETIC PACKAGE
POUT = 30 W MIN. WITH 8.5 dB GAIN
.400 x .400 2NLF L (S042)
ORDER CODE BRANDING
DESCRIPTION PIN CONNECTION
The AM80610-030 is a high power, common
base NPN silicon bipolar device optimized for
CW operation in the 620 - 960 MHz frequency
AM80610-030 utilizes a rugged, overlay, emitter-
ballasted L-Band die geometry to achieve high
gain and collector efficiency and is suitable for
driver or output stage use in Class C power am-
plifiers. Typical applications include military com-
munications, ECM, and test equipment.
The AM80610-030 is provided in the industry-
standard, metal/ceramic AMPACTM hermetic 1. Collector 3. Emitter
package. 2. Base 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25
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