Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors ST am81214-006

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                                                                                    AM81214-006
                                                RF & MICROWAVE TRANSISTORS
                                                  L-BAND RADAR APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    5:1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 5.5 W MIN. WITH 10 dB GAIN
                                                                      .310 x .310 2LF L (S064)
                                                                          hermetically sealed
                                                                ORDER CODE                      BRANDING
                                                                 AM81214-6                       81214-6




DESCRIPTION                                                             PIN CONNECTION
The AM81214-006 device is a high power Class
C transistor specifically designed for L-Band Ra-
dar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire
bonding techniques ensure high reliability and
product consistency.
AM81214-006 is supplied in the grounded IM-
                                                                     1. Collector           3. Emitter
PACTM Hermetic Metal/Ceramic package with in-
ternal input/output matching structures.                             2. Base                4. Base




ABSOLUTE MAXIMUM RATINGS (T case = 25 

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