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                                                                                     AM81214-030
                                                RF & MICROWAVE TRANSISTORS
                                                  L-BAND RADAR APPLICATIONS
.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    RUGGEDIZED VSWR :1

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 26 W MIN. WITH 7.2 dB GAIN
                                                                          .310 x .310 2LFL (S064)
                                                                              hermetically sealed

                                                                ORDER CODE                        BRANDING
                                                                 AM81214-030                       81214-30




DESCRIPTION                                                              PIN CONNECTION
The AM81214-030 device is a high power transistor
specifically designed for L-Band Radar pulsed
driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding :1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM81214-030 is supplied in the IMPACTM Her-
metic M etal/Ceramic package with i nternal                           1. Collector           3. Emitter
Input/Output matching structures.                                     2. Base                4. Base



ABSOLUTE MAXIMUM RATINGS (Tcase = 25 

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