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RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
RUGGEDIZED VSWR :1
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
POUT = 55 W MIN. WITH 6.6 dB GAIN
.400 x .400 2NLFL (S042)
ORDER CODE BRANDING
DESCRIPTION PIN CONNECTION
The AM81214-060 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding :1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
The AM81214-060 is supplied in the AMPACTM
Hermetic Metal/Ceramic package with internal 1. Collector 3. Emitter
Input/Output matching structures. 2. Base 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25
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