Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors ST am81719-040
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RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
PRELIMINARY DAT A
.
. REFRACTORY/GOLD METALLIZATION
.
.
EMITTER SITE BALLASTED
INPUT/OUTPUT MATCHING
.
.
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 40 W MIN. WITH 7 dB GAIN
.400 X .400 2 LF L (M228)
hermetically sealed
ORDER CO DE BRANDING
AM81719-040 81719-40
PIN CONNECTION
DESCRIPTION
The AM81719-040 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the
1.75 - 1.85 GHz frequency range.
An emitter-ballasted refractory-gold overlay die
geometry with computerized automatic wire-
bonding is employed to ensure long-term reliabil- 1. Collector 3. Emitter
ity and product consistency. 2. Base 4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
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