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am81719-040


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                                                                                 AM81719-040
                                                RF & MICROWAVE TRANSISTORS
                                                     TELEMETRY APPLICATIONS
                                                                                          PRELIMINARY DAT A

.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 40 W MIN. WITH 7 dB GAIN
                                                                   .400 X .400 2 LF L (M228)
                                                                       hermetically sealed

                                                            ORDER CO DE                       BRANDING
                                                             AM81719-040                       81719-40



                                                                     PIN CONNECTION




DESCRIPTION
The AM81719-040 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the
1.75 - 1.85 GHz frequency range.
An emitter-ballasted refractory-gold overlay die
geometry with computerized automatic wire-
bonding is employed to ensure long-term reliabil-                 1. Collector            3. Emitter
ity and product consistency.                                      2. Base                 4. Base



ABSOLUTE MAXIMUM RATINGS (Tcase = 25



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