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                                                                                      AM81719-030
                                                RF & MICROWAVE TRANSISTORS
                                                     TELEMETRY APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION
                                                                                              PRELIMINARY DATA



.
.
    EMITTER SITE BALLASTED
    LOW THERMAL RESISTANCE

.
.
    INPUT/OUTPUT MATCHING
    OVERLAY GEOMETRY

.   METAL/CERAMIC HERMETIC PACKAGE
    P OUT = 28 W MIN. WITH 6.7 dB GAIN                                    .400 SQ 2LFL (M147)
                                                                            hermetically sealed
                                                                ORDER CODE                       BRANDING
                                                                 AM81719-030                      81719-030




                                                                          PIN CONNECTION


DESCRIPTION
The AM81719-030 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the 1.75
- 1.85 GHz frequency range.
An emitter site ballasted refractory/gold overlay
die geometry computerized automatic wire bonding
is employed to ensure long term reliability and
product consistency.
                                                                       1. Collector           3. Emitter
AM81719-030 is supplied in the industry-standard                       2. Base                4. Base
AMPACTM hermetic metal/ceramic package.


ABSOLUTE MAXIMUM RATINGS (T case = 25 

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