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                                                                                             AM82223-010
                                               RF & MICROWAVE TRANSISTORS
                                                    TELEMETRY APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.   EMITTER SITE BALLASTED
     :1 VSWR CAPABILITY AT RATED
.
.
    CONDITIONS
    LOW THERMAL RESISTANCE

.
.
    INPUT/OUTPUT MATCHING
    OVERLAY GEOMETRY                                                           .400 x .400 2NLFL (S042)

.   METAL/CERAMIC HERMETIC PACKAGE
    POUT = 9 W MIN. WITH 6.5 dB GAIN                                    ORDER CODE
                                                                                   hermetically sealed


                                                                         AM82223-010
                                                                                                          BRANDING
                                                                                                           82223-10

DESCRIPTION
The AM82223-010 is a common base, silicon                                        PIN CONNECTION
NPN bipolar transistor designed for high gain
and efficiency in the 2.2 - 2.3 GHz frequency
range.
Suitable for hi-rel aerospace telemetry applica-
tions, the AM82223-010 is provided in the indus-
try-standard AMPACTM metal/ceramic hermetic
package and incorporates internal input and out-
put impedance matching structures along with a
rugged, emitter-site ballasted overlay die geome-
try.
AM82223-010 is capable of withstanding :1                                     1. Collector           3. Emitter
load mismatch at any phase angle under full
                                                                              2. Base                4. Base
rated operating conditions.

ABSOLUTE MAXIMUM RATINGS (T case = 25 

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