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                                                                                     AM82731-003
                                                RF & MICROWAVE TRANSISTORS
                                                  S-BAND RADAR APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    10:1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT IMPEDANCE MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE

.
                                                                       .400 x .400 2NLFL (S042)
    POUT = 3.0 W. MIN. WITH 5.7 dB GAIN                                    hermetically sealed
    BANDWIDTH = 400 MHz                                         ORDER CODE                       BRANDING
                                                                 AM 82731-003                     82731-3



                                                                         PIN CONNECTION
DESCRIPTION
The AM82731-003 device is a medium power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
can withstand a 10:1 output VSWR. Low RF thermal
resistance, refractory/gold metallization, and auto-
matic wire bonding techniques ensure high reliability
and product consistency.
The AM82731-003 is supplied in the hermetic met-
al/ceramic package with internal input/output imped-                  1. Collector           3. Emitter
ance matching circuitry, and is intended for military                 2. Base                4. Base
and other high reliability applications.

ABSOLUTE MAXIMUM RATINGS (T case = 25

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