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RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
. LOW PARASITIC, DOUBLE LEVEL MET-
EMITTER SITE BALLASTED
3:1 VSWR @ 1 dB OVERDRIVE
LOW RF THERMAL RESISTANCE
INPUT/OUTPUT IMPEDANCE MATCHING
.400 x .400 2LFL (S036)
METAL/CERAMIC HERMETIC PACKAGE
POUT = 25 W MIN. WITH 6.2 dB GAIN ORDER CODE
The AM82731-025 device is a high power silicon bi- PIN CONNECTION
polar NPN transistor specifically designed for S-Band
radar pulsed output and driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
can withstand a 3:1 output VSWR with a +1dB input
over drive. Low RF thermal resistance, refrac-
tory/gold metallization, and automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM82731-025 is supplied in the Hermetic Met-
al/Ceramic package with internal Input/Output im-
1. Collector 3. Emitter
pedance matching circuitry, and is intended for mili-
tary and other high reliability applications. 2. Base 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25
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