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                                                                                    AM82731-025
                                                RF & MICROWAVE TRANSISTORS
                                                  S-BAND RADAR APPLICATIONS
.   LOW PARASITIC, DOUBLE LEVEL MET-

.
.
    AL DESIGN
    REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    3:1 VSWR @ 1 dB OVERDRIVE

.
.
    LOW RF THERMAL RESISTANCE
    INPUT/OUTPUT IMPEDANCE MATCHING
                                                                      .400 x .400 2LFL (S036)

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 25 W MIN. WITH 6.2 dB GAIN                          ORDER CODE
                                                                          hermetically sealed

                                                                                                BRANDING
                                                                AM82731-025                      82731-25



DESCRIPTION
The AM82731-025 device is a high power silicon bi-                      PIN CONNECTION
polar NPN transistor specifically designed for S-Band
radar pulsed output and driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
can withstand a 3:1 output VSWR with a +1dB input
over drive. Low RF thermal resistance, refrac-
tory/gold metallization, and automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM82731-025 is supplied in the Hermetic Met-
al/Ceramic package with internal Input/Output im-
                                                                     1. Collector           3. Emitter
pedance matching circuitry, and is intended for mili-
tary and other high reliability applications.                        2. Base                4. Base



ABSOLUTE MAXIMUM RATINGS (T case = 25 

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