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                                                                                    AM82731-050
                                                RF & MICROWAVE TRANSISTORS
                                                  S-BAND RADAR APPLICATIONS
.
.   REFRACTORY/GOLD METALLIZATION

.   EMITTER SITE BALLASTED
    RUGGEDIZED VSWR 3:1 @ 1 dB OVER-

.
.
    DRIVE
    LOW THERMAL RESISTANCE

.
.
    INPUT/OUTPUT MATCHING
    OVERLAY GEOMETRY

.   METAL/CERAMIC HERMETIC PACKAGE
    POUT = 50 W MIN. WITH 6 dB GAIN
                                                                      .400 x .400 2LFL (S036)

                                                               ORDER CODE
                                                                          hermetically sealed

                                                                AM82731-050
                                                                                                BRANDING
                                                                                                 82731-50


DESCRIPTION
The AM82731-050 device is a high power silicon                          PIN CONNECTION
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
The device is capable of operation over a wde
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR with
a +1 dB input overdrive. Low RF thermal resist-
ance, refractory/gold metallization, and compu-
terized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM82731-050 is supplied in the AMPACTM
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and is                    1. Collector           3. Emitter
intended for military and other high reliability ap-
                                                                     2. Base                4. Base
plications.


ABSOLUTE MAXIMUM RATINGS (T case = 25 

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