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RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
. EMITTER SITE BALLASTED
RUGGEDIZED VSWR 3:1 @ 1 dB OVER-
LOW THERMAL RESISTANCE
. METAL/CERAMIC HERMETIC PACKAGE
POUT = 50 W MIN. WITH 6 dB GAIN
.400 x .400 2LFL (S036)
The AM82731-050 device is a high power silicon PIN CONNECTION
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
The device is capable of operation over a wde
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR with
a +1 dB input overdrive. Low RF thermal resist-
ance, refractory/gold metallization, and compu-
terized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM82731-050 is supplied in the AMPACTM
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and is 1. Collector 3. Emitter
intended for military and other high reliability ap-
2. Base 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25
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