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am83135-01


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                                                                                          AM83135-001
                                                    RF & MICROWAVE TRANSISTORS
                                                      S-BAND RADAR APPLICATIONS

.
.   REFRACTORY/GOLD METALL IZATION

.
.
    EMITTER SITE BALLASTED
    10:1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 1.0 W MIN. WITH 5.2 dB GAIN
                                                                            .400 x .400 2NLF L (S042)
                                                                                hermetically sealed
                                                                     O RDER CODE                  BRANDING
                                                                      AM83135-001                  83135-1



DESCRIPTION                                                                   PIN CONNECTION
The AM83135-001 device is a medium power sili-
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 10:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and automatic wire bonding techniques
ensure high reliability and product consistency.
The AM83135-001 is supplied int the AMPACTM
Hermet ic/Ceramic package with internal In-                                1. Collector      3. Emitter
put/Output impedance matching circuitry, and is                            2. Base           4. Base
intended for military and other high reliability ap-


ABSOLUTE MAXIMUM RATINGS (T case = 25



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