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RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
. REFRACTORY/GOLD METALL IZATION
EMITTER SITE BALLASTED
10:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
POUT = 1.0 W MIN. WITH 5.2 dB GAIN
.400 x .400 2NLF L (S042)
O RDER CODE BRANDING
DESCRIPTION PIN CONNECTION
The AM83135-001 device is a medium power sili-
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 10:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and automatic wire bonding techniques
ensure high reliability and product consistency.
The AM83135-001 is supplied int the AMPACTM
Hermet ic/Ceramic package with internal In- 1. Collector 3. Emitter
put/Output impedance matching circuitry, and is 2. Base 4. Base
intended for military and other high reliability ap-
ABSOLUTE MAXIMUM RATINGS (T case = 25
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