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RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
. REFRACTORY/GOLD METALL IZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
POUT = 5.0 W MIN. WITH 5.2 dB GAIN
.400 x .400 2NL FL (S042)
O RDER CODE BRANDING
The AM83135-005 device is a medium power sili- PIN CONNECTION
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths. duty cycles and tempera-
tures, and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and computerized automatic wire bond-
ing techniques ensure high reliability and product
The AM83135-005 is supplied in the AMPACTM
Hermetic Metal/Ceramic package with internal In-
put/Output matching circuitry, and is intended for 1. Collector 3. Emitter
military and other high reliability applications. 2. Base 4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
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