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                                                                                             AM83135-005
                                                      RF & MICROWAVE TRANSISTORS
                                                        S-BAND RADAR APPLICATIONS
.
.   REFRACTORY/GOLD METALL IZATION

.
.
    EMITTER SITE BALLASTED
    5:1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 5.0 W MIN. WITH 5.2 dB GAIN
                                                                               .400 x .400 2NL FL (S042)
                                                                                   hermetically sealed

                                                                        O RDER CODE                  BRANDING
                                                                         AM83135-005                  83135-5



DESCRIPTION
The AM83135-005 device is a medium power sili-                                   PIN CONNECTION
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths. duty cycles and tempera-
tures, and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM83135-005 is supplied in the AMPACTM
Hermetic Metal/Ceramic package with internal In-
put/Output matching circuitry, and is intended for                            1. Collector      3. Emitter
military and other high reliability applications.                             2. Base           4. Base


ABSOLUTE MAXIMUM RATINGS (Tcase = 25

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