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am0912-080


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                                                                                     AM0912-080
                                                RF & MICROWAVE TRANSISTORS
                                                       AVIONICS APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    LOW THERMAL RESISTANCE

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.
    INPUT/OUTPUT MATCHING
    OVERLAY GEOMETRY

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.
    METAL/CERAMIC HERMETIC PACKAGE
    POUT = 90 W MIN. WITH 13 dB GAIN
    BANDWIDTH 225 MHz
                                                                      .400 x .400 2NLFL (S042)
                                                                          hermetically sealed
                                                               ORDER CODE                        BRANDING
                                                                AM0912-080                        0912-80




                                                                        PIN CONNECTION
DESCRIPTION
The AM0912-080 Avionics power transistor is a
broadband, high peak pulse power device speci-
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.
This device is also designed for specialized ap-
plications including JTIDS where reduced power
provided under pulse formats utilizing short pulse
widths and high burst or overall duty cycles.
The AM0 912-08 0 is ho used in the unique                            1. Collector           3. Emitter
AMPACTM Hermetic Metal/Ceramic package with                          2. Base                4. Base
internal Input/Output matching structures.
ABSOLUTE MAXIMUM RATINGS (T case = 25 



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