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RF & MICROWAVE TRANSISTORS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
POUT = 90 W MIN. WITH 13 dB GAIN
BANDWIDTH 225 MHz
.400 x .400 2NLFL (S042)
ORDER CODE BRANDING
The AM0912-080 Avionics power transistor is a
broadband, high peak pulse power device speci-
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
This device is also designed for specialized ap-
plications including JTIDS where reduced power
provided under pulse formats utilizing short pulse
widths and high burst or overall duty cycles.
The AM0 912-08 0 is ho used in the unique 1. Collector 3. Emitter
AMPACTM Hermetic Metal/Ceramic package with 2. Base 4. Base
internal Input/Output matching structures.
ABSOLUTE MAXIMUM RATINGS (T case = 25
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