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RF & MICROWAVE TRANSISTORS
. REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
15:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2LFL (S038)
. POUT = 300 W MIN. WITH 7.0 dB GAIN
BANDWIDTH 255 MHz ORDER CODE
The AM0912-300 avionics power transistor is a
broadband, high peak pulse power device speci- PIN CONNECTION
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
The AM0912-300 is also designed for specialized
applications where reduced power is provided
under pulse formats utilizing short pulse widths
and high burst or overall duty cycles.
This device is capable of withstanding 15:1 VSWR
mismatch load condition at any phase angle under
full rated conditions.
The AM0912-300 is housed in the unique BIG- 1. Collector 3. Emitter
PACTM Hermetic Metal/Ceramic package with in- 2. Base 4. Base
ternal Input/Output matching structures.
ABSOLUTE MAXIMUM RATINGS (T case = 25
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