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am0912-300


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                                                                                     AM0912-300
                                                RF & MICROWAVE TRANSISTORS
                                                       AVIONICS APPLICATIONS
.
.   REFRACTORY/GOLD METALLIZATION

.
.
    EMITTER SITE BALLASTED
    15:1 VSWR CAPABILITY

.
.
    LOW THERMAL RESISTANCE
    INPUT/OUTPUT MATCHING

.
.
    OVERLAY GEOMETRY
    METAL/CERAMIC HERMETIC PACKAGE                                      .400 x .500 2LFL (S038)


.   POUT = 300 W MIN. WITH 7.0 dB GAIN
    BANDWIDTH 255 MHz                                           ORDER CODE
                                                                 AM0912-300
                                                                            hermetically sealed
                                                                                                BRANDING
                                                                                                 0912-300
DESCRIPTION

The AM0912-300 avionics power transistor is a
broadband, high peak pulse power device speci-                          PIN CONNECTION
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.
The AM0912-300 is also designed for specialized
applications where reduced power is provided
under pulse formats utilizing short pulse widths
and high burst or overall duty cycles.
This device is capable of withstanding 15:1 VSWR
mismatch load condition at any phase angle under
full rated conditions.
The AM0912-300 is housed in the unique BIG-                          1. Collector           3. Emitter
PACTM Hermetic Metal/Ceramic package with in-                        2. Base                4. Base
ternal Input/Output matching structures.

ABSOLUTE MAXIMUM RATINGS (T case = 25 



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